AO3160 600v,0.04a n-channel mosfet general description product summary 700v@150 i d (at v gs =10v) 0.04a r ds(on) (at v gs =10v) < 500 r ds(on) (at v gs =4.5v) < 600 symbol v ds the AO3160 is fabricated using an advanced high vol tage mosfet process that is designed to deliver high lev els of performance and robustness in popular ac-dc applications. by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. v ds v units parameter absolute maximum ratings t a =25c unless otherwise noted maximum drain-source voltage 600 sot23a top view bottom view d g s g s d g ds v ds v gs i dm peak diode recovery dv/dt dv/dt t j , t stg symbol t 10s steady-state steady-state r jl maximum junction-to-lead c c/w c/w 63 125 80 100 v/ns 5 p d t a =25c maximum junction-to-ambient a r ja maximum junction-to-ambient a 90 w max thermal characteristics units c/w 70 parameter typ v drain-source voltage 600 v 20 gate-source voltage t a =70c a i d t a =25c 0.04 0.03 0.12 pulsed drain current b continuous drain current a,f junction and storage temperature range -50 to 150 c power dissipation a t a =70c 1.39 0.89 sot23a top view bottom view d g s g s d g ds rev1: april 2012 www.aosmd.com page 1 of 5 downloaded from: http:///
AO3160 symbol min typ max units 600 - - - 700 - bv dss / ? tj - 0.64 - v/ o c - - 1 - - 10 i gss gate-body leakage current - - 100 n v gs(th) gate threshold voltage 1.4 2 3.2 v - 232 500 - 315 600 g fs - 0.024 - s v sd - 0.74 1 v i s maximum body-diode continuous current - - 0.04 a i sm - - 0.12 a c iss - 10 15 pf c oss - 1.8 3 pf c rss - 0.7 1 pf r g 5 10 15 q g - 1 1.5 nc q gs - 0.1 0.15 nc q gd - 0.52 0.8 nc t d(on) - 4 12 ns t r - 5.2 8 ns t d(off) - 12.5 19 ns static drain-source on-resistance v gs =10v, i d =0.016a reverse transfer capacitance v gs =0v, v ds =25v, f=1mhz switching parameters turn-on rise time turn-off delaytime v gs =10v, v ds =300v, i d =0.01a, r g =6 r ds(on) static drain-source on-resistance v gs =4.5v, i d =0.016a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions bv dss a v zero gate voltage drain current id=250 a, vgs=0v v ds =0v, v gs =20v drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c i dss zero gate voltage drain current v ds =600v, v gs =0v gate drain charge v ds =5v, i d =8 a v ds =480v, t j =125c i s =0.016a,v gs =0v v ds =40v, i d =0.016a forward transconductance dynamic parameters diode forward voltage gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =400v, i d =0.01a gate source charge maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime t d(off) - 12.5 19 ns t f - 55 82.5 ns t rr - 105 160 ns q rr - 9.5 14.3 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =0.016a,di/dt=100a/ s,v ds =300v turn-off delaytime r g =6 turn-off fall time body diode reverse recovery charge i f =0.016a,di/dt=100a/ s,v ds =300v body diode reverse recovery time a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user's specif ic board design. b: repetitive rating, pulse width limited by juncti on temperature. c. the r ja is the sum of the thermal impedence from junction t o lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s thermal resistance rating. rev1: april 2012 www.aosmd.com page 2 of 5 downloaded from: http:///
AO3160 typical electrical and thermal characteristics 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0 2 4 6 8 10 i d (a) v ds (volts) fig 1: on-region characteristics v gs =3.5 4v 10v 4.5v 5v 0 0.005 0.01 0.015 0.02 0.025 0 1 2 3 4 5 i d (a) v gs (volts) figure 2: transfer characteristics v ds =40v 25 c 0 200 400 600 800 0 0.01 0.02 0.03 0.04 r ds(on) ( ? ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v v gs =4.5v 0.5 1 1.5 2 2.5 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =0.016a v gs =4.5v i d =0.016a 40 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c i d =30a 25 125 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0 2 4 6 8 10 i d (a) v ds (volts) fig 1: on-region characteristics v gs =3.5 4v 10v 4.5v 5v 0 0.005 0.01 0.015 0.02 0.025 0 1 2 3 4 5 i d (a) v gs (volts) figure 2: transfer characteristics v ds =40v 25 c 0 200 400 600 800 0 0.01 0.02 0.03 0.04 r ds(on) ( ? ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v v gs =4.5v 0.5 1 1.5 2 2.5 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =0.016a v gs =4.5v i d =0.016a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 bv dss (normalized) t j ( o c) figure 5: break down vs. junction temperature rev1: april 2012 www.aosmd.com page 3 of 5 downloaded from: http:///
AO3160 typical electrical and thermal characteristics 0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =400v i d =0.01a 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.0001 0.001 0.01 0.1 1 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note e) 1s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t a =25 c 100 s 10s 0 20 40 60 80 100 120 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) t j(max) =150 c t a =25 c 0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =400v i d =0.01a 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.0001 0.001 0.01 0.1 1 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note e) 1s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t a =25 c 100 s 10s 0 20 40 60 80 100 120 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) t j(max) =150 c t a =25 c 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z ? jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note e) d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =125 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev1: april 2012 www.aosmd.com page 4 of 5 downloaded from: http:///
AO3160 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id - + vdc l vgs vds id bv i unclamped inductive switching (uis) test circuit & waveforms vds ar dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar rev1: april 2012 www.aosmd.com page 5 of 5 downloaded from: http:///
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